2SD1140_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process) (Darlington Power Transistor)

2SD1140
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington Power Transistor)
2SD1140
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
• High DC current gain: h_FE = 4000 (min) (V_CE = 2 V, I_C = 150 mA)
• Low saturation voltage: V_{CE (sat)} = 1.5 V (max) (I_C = 1 A, I_B = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
30
V
Collector-emitter voltage
V_CEO
30
V
Emitter-base voltage
V_EBO
10
V
Collector current
I_C
1.5
A
Base current
I_B
50
mA
Collector power dissipation
P_C
900
mW
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
TO-92MOD
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
BASE
COLLECTOR
EMITTER
1
2006-11-21