2SC6026MFV Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Collector cutoff current
I_CBO
V_CB = 60 V, I_E = 0
Emitter cutoff current
I_EBO
V_EB = 5 V, I_C = 0
DC current gain
h_FE (Note) V_CE = 6 V, I_C = 2 mA
Collector-emitter saturation voltage
V_{CE (sat)} I_C = 100 mA, I_B = 10 mA
Transition frequency
f_T
V_CE = 10 V, I_C = 1 mA
Collector output capacitance
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_FE classification Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Marking
HY
Type Name
h_FE Classification
2SC6026MFV
Min Typ. Max Unit
⎯
⎯
0.1
µA
⎯
⎯
0.1
µA
120 ⎯ 400 ⎯
⎯
0.1 0.25
V
60
⎯
⎯ MHz
⎯ 0.95
3
pF
2
2005-06-28