2SC6026MFV Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC6026MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026MFV
General-Purpose Amplifier Applications
• High voltage and high current
: V_CEO = 50 V, I_C = 150 mA (max)
• Excellent h_FE linearity :
h_FE (I_C = 0.1 mA)/h_FE (I_C = 2 mA) = 0.95 (typ.)
• High h_FE
: ^hFE ^{= 120~400}
• Complementary to 2SA2154MFV
• Lead (Pb) - free
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
60
V
Collector-emitter voltage
V_CEO
50
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
150
mA
Base current
I_B
30
mA
Collector power dissipation
P_C
150*
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mm)
Mount Pad Dimensions (Reference)
0.5
0.45
1.15
0.4
0.45
0.4 0.4
Unit: mm
Unit: mm
1.2 ± 0.05
0.80 ± 0.05
1
1
3
2
VESM
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 0.0015 g (typ.)
1
2005-06-28