2SC6026 Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications

2SC6026
120
2.0 1.5
100
IC - VCE
1.0
0.7
80
0.5
60
0.3
40
20
0
0
0.2
IB=0.1mA
COMMON EMITTER　Ta=25°C
1234567
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
1
COMMON EMITTER
IC/IB = 10
0.1
Ta = 100°C
25
-25
0.01
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1000
IB - VBE
100
Ta = 100°C
10
25
-25
1
0.1
0
COMMON EMITTER
VCE = 6V
0.2 0.4 0.6 0.8 1 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
1000
hFE - IC
Ta = 100°C 25
100
-25
COMMON EMITTER
　　　VCE = 6V
　　　VCE = 1V
10
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
VBE(sat) - IC
10
COMMON EMITTER
IC/ IB = 10
25
1
-25
Ta = 100°C
0.1
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
100
90
80
70
60
50
40
30
20
10
0
0
PC - Ta
Mounted on FR4 board
　　　　　(10 mm × 10 mm × 1 mmt)
20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
2
2005-03-23