2SC6026 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026
2SC6026
General-Purpose Amplifier Applications
• High voltage and high current
: V_CEO = 50 V, I_C = 100 mA (max)
• Excellent h_FE linearity : h_FE (I_C = 0.1 mA)/h_FE (I_C = 2 mA) = 0.95 (typ.)
• High h_FE
: ^hFE ^{= 120~400}
• Complementary to 2SA2154
• Lead (Pb) free
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
60
V
50
V
5
V
100
mA
30
mA
50
mW
150
°C
−55~150
°C
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Collector cutoff current
I_CBO
V_CB = 60 V, I_E = 0
Emitter cutoff current
I_EBO
V_EB = 5 V, I_C = 0
DC current gain
h_FE (Note) V_CE = 6 V, I_C = 2 mA
Collector-emitter saturation voltage
V_{CE (sat)} I_C = 100 mA, I_B = 10 mA
Transition frequency
f_T
V_CE = 10 V, I_C = 1 mA
Collector output capacitance
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_FE classification Y (F): 120~240, GR (H): 200~400
( ) marking symbol
Marking
Type Name
h_FE Rank
Unit: mm
1
3
2 0.8±0.05
1.0±0.05
0.1±0.05
0.1±0.05
1.BASE
2.EMITTER
fSM
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1E1A
Weight: 0.0006 g (typ.)
Min Typ. Max Unit
⎯
⎯
0.1
µA
⎯
⎯
0.1
µA
120 ⎯ 400 ⎯
⎯
0.1 0.25
V
60
⎯
⎯ MHz
⎯ 0.95 ⎯
pF
7F
1
2005-03-23