2SC6000 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High Speed Switching Applications DC-DC Converter Applications

Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Rise time
Switching time _{Storage time}
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_{BE (sat)}
t_r
t_stg
t_f
V_CB = 120 V, I_E = 0
V_EB = 6 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 2 V, I_C = 1 mA
V_CE = 2 V, I_C = 2.5 A
I_C = 2.5 A, I_B = 83 mA
I_C = 2.5 A, I_B = 83 mA
See Figure 1 circuit diagram
V_CC ∼− 20 V, R_L = 8.0 Ω
I_B1 = 83 mA, I_B2 = −166 mA
Figure 1 Switching Time Test Circuit & Timing Chart
20μs
IB1
IB2
Duty cycle ＜ 1%
IB1
Input
IB2
VCC
Output
Marking
2SC6000
Min Typ. Max Unit
―
―
100
nA
―
―
100
nA
50
―
―
V
160
―
―
250
―
400
―
―
0.18
V
―
―
1.10
V
―
45
―
― 450 ―
ns
―
13
―
C6000
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-13