2SC6000 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications DC-DC Converter Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6000
High Speed Switching Applications
DC-DC Converter Applications
2SC6000
Unit: mm
• High DC current gain: h_FE = 250 to 400 (I_C = 2.5 A)
• Low collector-emitter saturation: V_{CE (sat)} = 0.18 V (max)
• High speed switching: t_f = 13 ns (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEX
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
120
V
120
V
50
V
6
V
7.0
A
10.0
0.5
A
20
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-13