2SC5088_07 Datasheet, PDF (2/7 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

2SC5088
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
I_CBO
V_CB = 10 V, I_E = 0
⎯
⎯
1
μA
I_EBO
V_EB = 1 V, I_C = 0
⎯
⎯
1
μA
h_FE
V_CE = 10 V, I_C = 20 mA
(Note 1)
80
⎯
240
C_ob
⎯
1.1
1.6
pF
V_CB = 10 V, I_E = 0, f = 1 MHz (Note 2)
C_re
⎯ 0.65 1.05 pF
Note 1: h_FE classification O: 80~160, Y: 120~240
Note 2: C_re is measured by 3 terminal method with capacitance bridge.
Marking
4
3
MCO
Type name
h_FE rank
1
2
2
2007-11-01