2SC5088_07 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5088
2SC5088
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.1dB, |S_21e|² = 13dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_B
I_C
P_C
T_j
T_stg
20
V
12
V
3
V
40
mA
80
mA
100
mW
125
°C
−55~125
°C
USQ
1.Emitter1
2.Collector
3.Emitter2
4.Base
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2K1A
absolute maximum ratings.
Weight: 0.006 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/
“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
f_T
⎪S_21e⎪² (1)
⎪S_21e⎪² (2)
NF (1)
NF (2)
V_CE = 10 V, I_C = 20 mA
V_CE = 10 V, I_C = 20 mA, f = 500 MHz
V_CE = 10 V, I_C = 20 mA, f = 1 GHz
V_CE = 10 V, I_C = 5 mA, f = 500 MHz
V_CE = 10 V, I_C = 5 mA, f = 1 GHz
Min Typ. Max Unit
5
7
⎯
18
9.5
13
⎯
1
⎯
1.1
⎯ GHz
⎯
dB
⎯
⎯
dB
2
1
2007-11-01