2SC2714_07 Datasheet, PDF (2/8 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type (PCT process)

2SC2714
L1: 0.8 mmφ silver plated copper wire, 4 T, 10ID, 8 length
Figure 1 NF, G_pe Test Circuit
y Parameter (typ.)
(1) Common emitter (V_CE = 6 V, I_E = −1 mA, f = 100 MHz)
Characteristics
Symbol
Typ. Unit
Input conductance
Input capacitance
Reverse transfer admittance
Phase angle of reverse transfer
admittance
Forward transfer admittance
Phase angle of forward transfer
admittance
Output conductance
Output capacitance
g_ie
C_ie
⎪y_re⎪
θ_re
|y_fe|
θ_fe
g_oe
C_oe
2.9 mS
10.2 pF
0.33 mS
−90
°
40
mS
−20
°
45
μS
1.1
pF
(2) Common base (V_CE = 6 V, I_E = −1 mA, f = 100 MHz)
Characteristics
Symbol
Typ. Unit
Input conductance
Input capacitance
Reverse transfer admittance
Phase angle of reverse transfer
admittance
Forward transfer admittance
Phase angle of forward transfer
admittance
Output conductance
Output capacitance
g_ib
C_ib
⎪y_rb⎪
θ_rb
|y_fb|
θ_fb
g_ob
C_ob
34
mS
−10 pF
0.27 mS
−105
°
34
mS
165
°
45
μS
1.1
pF
2
2007-11-01