|
2SC2714_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type (PCT process) | |||
|
2SC2714
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2714
High Frequency Amplifier Applications
FM, RF, MIX,IF Amplifier Applications
Unit: mm
⢠Small reverse transfer capacitance: Cre = 0.7 pF (typ.)
⢠Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
20
mA
Base current
IB
4
mA
Collector power dissipation
PC
100
mW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
â55~125
°C
JEDEC
â
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
SC-59
2-3F1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.012 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
ICBO
IEBO
VCB = 18 V, IE = 0
VEB = 4 V, IC = 0
hFE
VCE = 6 V, IC = 1 mA
(Note)
Cre
VCB = 6 V, f = 1 MHz
fT
Ccï½¥rbbâ
VCE = 6 V, IC = 1 mA
VCE = 6 V, IE = â1 mA, f = 30 MHz
NF
VCE = 6 V, IE = â1 mA, f = 100 MHz,
Gpe
Figure 1
Note: hFE classification R: 40~80, O: 70~140, Y: 100~200
Min Typ. Max Unit
â¯
â¯
0.5
μA
â¯
â¯
0.5
μA
40
â¯
200
⯠0.70 â¯
pF
⯠550 ⯠MHz
â¯
â¯
30
ps
â¯
2.5
5.0
dB
17
23
â¯
dB
1
2007-11-01
|
▷ |