2SC2712_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process)

2SC2712
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
I_CBO
V_CB = 60 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
h_FE
V_CE = 6 V, I_C = 2 mA
(Note)
V_{CE (sat)} I_C = 100 mA, I_B = 10 mA
f_T
V_CE = 10 V, I_C = 1 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
NF
V_CE = 6 V, I_C = 0.1 mA, f = 1 kHz,
R_g = 10 kΩ
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
70
⎯
700
⎯
0.1 0.25
V
80
⎯
⎯ MHz
⎯
2.0
3.5
pF
⎯
1.0
10
dB
Note: h_FE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700
( ) marking symbol
2
2007-11-01