2SC2712_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2712
2SC2712
Audio Frequency General Purpose Amplifier Applications
Unit: mm
• High voltage and high current: V_CEO = 50 V, I_C = 150 mA (max)
• Excellent h_FE linearity : h_FE (I_C = 0.1 mA)/ h_FE (I_C = 2 mA)
= 0.95 (typ.)
• High h_FE: h_FE = 70~700
• Low noise: NF = 1dB (typ.), 10dB (max)
• Complementary to 2SA1162
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
60
V
Collector-emitter voltage
V_CEO
50
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
150
mA
Base current
I_B
30
mA
JEDEC
TO-236MOD
Collector power dissipation
P_C
150
mW
JEITA
SC-59
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01