2SB1018A_06 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type (PCT Process)

2SB1018A
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
V_CB = −100 V, I_E = 0
I_EBO
V_EB = −5 V, I_C = 0
V _{(BR) CEO} I_C = −50 mA, I_B = 0
h_{FE (1)}
V_CE = −1 V, I_C = −1 A
(Note)
h_{FE (2)}
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
V_CE = −1 V, I_C = −4 A
I_C = −4 A, I_B = −0.4 A
I_C = −4 A, I_B = −0.4 A
V_CE = −4 V, I_C = −1 A
V_CB = −10 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
―
―
−5
μA
―
―
−5
μA
−80 ―
―
V
70
―
240
30
―
―
― −0.3 −0.5
V
― −0.9 −1.4
―
10
― MHz
― 250 ―
pF
Turn-on time
t_on
Output
―
0.4
―
20 μs _Input ^IB2
Switching time Storage time
Fall time
t_stg
I_B1
V_CC = −30 V
t_f
−I_B1 = I_B2 = 0.3 A, duty cycle ≤ 1%
Note: h_{FE (1)} classification O: 70 to 140, Y: 120 to 240
―
2.5
―
μs
―
0.5
―
Marking
B1018A
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-21