2SB1018A_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type (PCT Process)

2SB1018A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SB1018A
High Current Switching Applications
Power Amplifier Applications
Unit: mm
• High collector current: I_C = −7 A
• Low collector saturation voltage: V_{CE (sat)} = −0.5 V (max) (I_C = −4 A)
• Complementary to 2SD1411A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−100
V
Collector-emitter voltage
V_CEO
−80
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−7
A
Base current
I_B
−1
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
2.0
W
30
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-21