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2SA2184 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High Voltage Switching Applications
Electrical Characteristics (Ta = 25°C)
2SA2184
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Rise time
Switching time Storage time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VCB = −550 V, IE = 0
VEB = −7 V, IC = 0
IC = −10 mA, IB = 0
VCE = −5 V, IC = −100 mA
VCE = −5 V, IC = −500 mA
IC = −300 mA, IB = −60 mA
IC = −300 mA, IB = −60 mA
fT
VCE = −5 V, IC = −50 mA
Cob
VCB = −10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
―
―
−10
μA
―
―
−1
μA
−550 ―
―
V
80
―
300
5
―
―
―
―
−0.7
V
―
―
−1.2
V
―
27
― MHZ
―
30
―
pF
tr
20 μs Input IB1
Output
―
0.1
―
IB2 IB2
μs
tstg
VCC = −300 V
―
1.6
―
Fall time
IB1 = 100 mA, IB2 = 200 mA
tf
Duty cycle ≤ 1%
―
40
―
ns
Marking
A2184
Part No. (or abbreviation code)
Lot No.
Note:2
Note 2 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
2
2009-04-24