2SA2184 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Voltage Switching Applications

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA2184
High Voltage Switching Applications
• High voltage: V_CEO = −550 V
• High speed: t_f = 40 ns (typ.) (I_C = −0.5A)
2SA2184
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−550
V
Collector-emitter voltage
V_CEO
−550
V
Emitter-base voltage
V_EBO
−7
V
Collector current
DC
I_C
Pulse
I_CP
−1
A
−2
Base current
I_B
−1
A
Collector power
dissipation
Ta = 25°C
P_C
Tc = 25°C
Junction temperature
T_j
Storage temperature range
T_stg
1
W
20
150
°C
−55 to 150
°C
Note:1 Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-04-24