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2SA2142 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High-Voltage Switching Applications
2SA2142
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Rise time
Switching time
Storage time
Symbol
Test Condition
Min
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = −600 V, IE = 0
VEB = −7 V, IC = 0
IC = −10 mA, IB = 0
VCE = −5 V, IC = −1 mA
VCE = −5 V, IC = −50 mA
IC = −100 mA, IB = −10 mA
IC = −100 mA, IB = −10 mA
VCE = −5 V, IC = −50 mA
VCB = −10 V, IE = 0, f = 1 MHz
⎯
⎯
−600
70
100
⎯
⎯
―
―
Output
tr
20 μs Input IB1
⎯
tstg
IB2 IB2
⎯
VCC ≒ −200 V
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
−0.76
35
24
0.2
2.3
Max
−10
−1
⎯
500
400
−1.0
−0.9
―
―
⎯
⎯
Unit
μA
μA
V
V
V
MHz
pF
μs
Fall time
tf
IB1 = 10 mA, IB2 = 20 mA,
Duty Cycle ≤ 1%
⎯
0.2
⎯
Marking
A2142
Product No.
Lot No.
Note2
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-12-21