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2SA2142 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Voltage Switching Applications | |||
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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA2142
2SA2142
High-Voltage Switching Applications
Unit: mm
⢠High breakdown voltage: VCEO = â600 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
DC
Pulse
Ta = 25°C
Tc = 25°C
VCBO
VCEO
VEBO
IC
ICP
IB
Pc
â600
V
â600
V
â7
V
â0.5
A
â1
â0.25
A
1
W
15
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
â55 to 150
°C
JEDEC
â
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
â
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21
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