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2SA2034 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High-Voltage Switching Applications | |||
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2SA2034
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
Collectorâemitter breakdown voltage
DC current gain
Collectorâemitter saturation voltage
Baseâemitter saturation voltage
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
VCB = â400 V, IE = 0
IEBO
VEB = â7 V, IC = 0
V (BR) CEO IC = â10 mA, IB = 0
hFE (1) VCE = â5 V, IC = â1 mA
hFE (2) VCE = â5 V, IC = â0.1 A
VCE (sat) IC = â0.5 A, IB = â0.1 A
VBE (sat)
IC = â0.5 A, IB = â0.1 A
20μs
tr
IB2
VCCâ-200V
IB1
tstg
IB1
Input
Output
IB2
tf
IB1 = 0.2A,IB2 = 0.2A
Duty Cycleï¼1%
Min Typ. Max Unit
â
â â10 μA
â
â
â1
μA
â400 â
â
V
80
â
â
â
80
â
240
â
â
â1.0
V
â
â
â1.5
V
â
â
0.3
â
â
2.5
μs
â
â
0.3
Marking
A2034
Product No.
Lot No.
Note2
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-12-21
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