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2SA2034 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High-Voltage Switching Applications
2SA2034
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
Collector−emitter breakdown voltage
DC current gain
Collector−emitter saturation voltage
Base−emitter saturation voltage
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
VCB = −400 V, IE = 0
IEBO
VEB = −7 V, IC = 0
V (BR) CEO IC = −10 mA, IB = 0
hFE (1) VCE = −5 V, IC = −1 mA
hFE (2) VCE = −5 V, IC = −0.1 A
VCE (sat) IC = −0.5 A, IB = −0.1 A
VBE (sat)
IC = −0.5 A, IB = −0.1 A
20μs
tr
IB2
VCC≒-200V
IB1
tstg
IB1
Input
Output
IB2
tf
IB1 = 0.2A,IB2 = 0.2A
Duty Cycle<1%
Min Typ. Max Unit
―
― −10 μA
―
―
−1
μA
−400 ―
―
V
80
―
―
―
80
―
240
―
―
−1.0
V
―
―
−1.5
V
―
―
0.3
―
―
2.5
μs
―
―
0.3
Marking
A2034
Product No.
Lot No.
Note2
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-12-21