2SA2034 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Voltage Switching Applications

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA2034
High-Voltage Switching Applications
2SA2034
Unit: mm
z High voltage
z High speed
: V_CBO = −400 V
: t_f = 0.3 μs (max) (I_C = −1.0 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector−base voltage
V_CBO
−400
V
Collector−emitter voltage
V_CEO
−400
V
Emitter−base voltage
V_EBO
−7
V
Collector current
DC
I_C
−2
A
Pulse
I_CP
−4
Base current
I_B
−1
A
Ta = 25°C
1
Collector power dissipation
P_C
W
Tc = 25°C
15
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21