2SA1618-GR Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = −50 V, I_E = 0
I_EBO
V_EB = −5 V, I_C = 0
h_FE
V_CE = −6 V, I_C = −2 mA
(Note 2)
V_{CE (sat)} I_C = −100 mA, I_B = −10 mA
f_T
V_CE = −10 V, I_C = −1 mA
C_ob
V_CB = −10 V, I_E = 0, f = 1 MHz
Note 2: h_FE classification Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
2SA1618
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
120
⎯
400
⎯
−0.1 −0.3
V
80
⎯
⎯ MHz
⎯
4
7
pF
2
2007-11-01