2SA1618-GR Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1618
Audio Frequency General Purpose Amplifier Applications
• Small package (dual type)
• High voltage and high current: V_CEO = −50 V, I_C = −150 mA (max)
• High h_FE: h_FE = 120~400
• Excellent h_FE linearity: h_FE (I_C = −0.1 mA)/ h_FE (I_C = −2 mA)
= 0.95 (typ.)
• Complementary to 2SC4207
2SA1618
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
−50
V
−50
V
−5
V
−150
mA
−30
mA
P_C
300
mW
(Note 1)
T_j
125
°C
T_stg
−55~125
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 0.014 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit (top view)
1
2007-11-01