2SA1358_07 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Audio Frequency Power Amplifier Applications

Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = −120 V, I_E = 0
I_EBO
V_EB = −5 V, I_C = 0
V _{(BR) CEO} I_C = −10 mA, I_B = 0
V _{(BR) EBO} I_E = −1 mA, I_C = 0
h_FE
V_CE = −5 V, I_C = −100 mA
(Note)
V_{CE (sat)}
V_BE
f_T
I_C = −500 mA, I_B = −50 mA
V_CE = −5 V, I_C = −500 mA
V_CE = −5 V, I_C = −100 mA
C_ob
V_CB = −10 V, I_E = 0, f = 1 MHz
Note: h_FE classification O: 80 to 160, Y: 120 to 240
Marking
2SA1358
Min Typ. Max Unit
―
― −100 nA
―
― −100 nA
−120 ―
―
V
−5
―
―
V
80
―
240
― −0.40 −1.0
V
― −0.77 −1.0
V
― 120 ― MHz
―
30
―
pF
Lot No.
A1358
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics indicator
Part No. (or abbreviation code)
2
2006-11-09