2SA1358_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency Power Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1358
Audio Frequency Power Amplifier Applications
2SA1358
Unit: mm
• Complementary to 2SC3421
• Suitable for driver of 60 to 80 watts
• High breakdown voltage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−120
V
Collector-emitter voltage
V_CEO
−120
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−1
A
Base current
I_B
−100
mA
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
1.5
W
10
Junction temperature
T_j
150
°C
JEDEC
―
Storage temperature range
T_stg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-8H1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.82 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09