1SS302A Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Switching Diodes Silicon Epitaxial Planar

5. Electrical Characteristics (Unless otherwise specified, T_a = 25 )
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
Test Condition
V_F(1)
V_F(2)
V_F(3)
I_R(1)
I_R(2)
C_t
t_rr
I_F = 1 mA
I_F = 10 mA
I_F = 100 mA
V_R = 30 V
V_R = 80 V
V_R = 0 V, f = 1 MHz
I_F = 10 mA
See Fig. 5.1.
Min
Typ.

0.60

0.72

0.90





0.9

1.6
1SS302A
Max
Unit

V

1.20
0.1
µA
0.5
3.0
pF
4.0
ns
6. Marking
Fig. 5.1 Reverse recovery time (t_rr) Test circuit
Fig. 6.1 Marking
2
2015-01-08
Rev.2.0