1SS302A Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Diodes Silicon Epitaxial Planar

Switching Diodes Silicon Epitaxial Planar
1SS302A
1. Applications
• Ultra-High-Speed Switching
2. Features
(1) Fast reverse recovery time : t_rr = 1.6 ns (typ.)
(2) AEC-Q101 qualified
3. Packaging and Internal Circuit
1SS302A
1: Anode 1
2: Cathode 2
3: Cathode1 / Anode 2
USM
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
V_RM
85
V
Reverse voltage
V_R
80
Peak forward current
I_FM
(Note 1)
300
mA
Average rectified current
I_O
(Note 1)
100
Power dissipation
P_D
(Note 2)
100
mW
Non-repetitive peak forward surge current
I_FSM (Note 1), (Note 3)
2
A
Junction temperature
T_j
150

Storage temperature
T_stg
-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Unit rating. Total rating = Unit rating × 70%
Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 3: Measured with a 10 ms pulse.
Start of commercial production
2014-12
1
2015-01-08
Rev.2.0