TC58FVT641 Datasheet, PDF (19/53 Pages) Toshiba Semiconductor – 64-MBIT (8M × 8 BITS / 4M × 16 BITS) CMOS FLASH MEMORY

ABSOLUTE MAXIMUM RATINGS
TC58FVT641/B641FT/XB-70,-10
SYMBOL
PARAMETER
V_DD
V_DD Supply Voltage
V_IN
Input Voltage
V_DQ
Input/Output Voltage
V_IDH
Maximum Input Voltage for A9, OE and RESET
V_ACCH
Maximum Input Voltage for WP/ACC
P_D
Power Dissipation
T_solder
Soldering Temperature (10s)
T_stg
Storage Temperature
T_opr
I_OSHORT
Operating Temperature
Output Short-Circuit Current⁽¹⁾
(1) Outputs should be shorted for no more than one second.
No more than one output should be shorted at a time.
RANGE
−0.6~4.6
−0.6~V_DD + 0.5 (≤ 4.6)
−0.6~V_DD + 0.5 (≤ 4.6)
13.0
10.5
126
260
−55~150
−40~85
100
UNIT
V
V
V
V
V
mW
°C
°C
°C
mA
CAPACITANCE (Ta = 25°C, f = 1 MHz)
TSOPI
SYMBOL
PARAMETER
C_IN
Input Pin Capacitance
C_OUT
Output Pin Capacitance
C_IN2
Control Pin Capacitance
This parameter is periodically sampled and is not tested for every device.
TFBGA
SYMBOL
PARAMETER
C_IN
Input Pin Capacitance
C_OUT
Output Pin Capacitance
C_IN2
Control Pin Capacitance
This parameter is periodically sampled and is not tested for every device.
CONDITION
V_IN = 0 V
V_OUT = 0 V
V_IN = 0 V
MAX
4
8
7
UNIT
pF
pF
pF
CONDITION
V_IN = 0 V
V_OUT = 0 V
V_IN = 0 V
MAX
TBD
TBD
TBD
UNIT
pF
pF
pF
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
V_DD
V_DD Supply Voltage
V_IH
Input High-Level Voltage
V_IL
Input Low-Level Voltage
V_ID
High-Level Voltage for A9, OE and RESET
V_ACC
High-Level Voltage for WP/ACC
Ta
Operating Temperature
(1) −2 V (pulse width of 20 ns max)
(2) +2 V (pulse width of 20 ns max)
MIN
MAX
2.7
0.7 × V_DD
−0.3⁽¹⁾
3.6
V_DD + 0.3⁽²⁾
0.2 × V_DD
11.4
12.6
8.5
9.5
−40
85
UNIT
V
°C
2001-09-06 19/53