TB2996HQ Datasheet, PDF (18/24 Pages) Toshiba Semiconductor – Bi-CMOS Linear Integrated Circuit Silicon Monolithic

TB2996HQ
R.R. – f (G_V = 26dB)
0
VCC = 13.2 V
RL = 4 Ω
RG = 620 Ω
-20 _{Vrip = 0.775 Vrms (0dBm)}
GV = 26dB
-40
1ch
4ch
-60
3ch 2ch
-80
0.01
0.1
1
10
frequency f (kHz)
Fig. 7-6 Frequency Characteristics of Ripple Rejection Rate
C.T. – f (ch1)
-30 _{VCC = 13.2 V}
RL = 4 Ω
-40 f = 1 kHz
VOUT = 0.775 Vrms (0dBm)
-50 ^{RG = 620 Ω}
2ch
-60
4ch
-70
-80
3ch
-90
-100
0.01
0.1
1
10
frequency f (kHz)
C.T. – f (ch2)
-30 _{VCC = 13.2 V}
RL = 4 Ω
-40 ^{f = 1 kHz}
VOUT = 0.775 Vrms (0dBm)
-50 ^{RG = 620 Ω}
-60
1ch
-70
4ch
-80
3ch
-90
-100
0.01
0.1
1
10
frequency f (kHz)
-30 _{VCC = 13.2 V}
C.T. – f (ch3)
RL = 4 Ω
-40 ^{f = 1 kHz}
VOUT = 0.775 Vrms (0dBm)
-50 ^{RG = 620 Ω}
-60
-70
1ch
4ch
-80 _2ch
-90
-100
0.01
0.1
1
10
frequency f (kHz)
-30 _{VCC = 13.2 V}
C.T. – f (ch4)
RL = 4 Ω
-40 ^{f = 1 kHz}
VOUT = 0.775 Vrms (0dBm)
RG = 620 Ω
-50
3ch
-60
-70
1ch
2ch
-80
-90
-100
0.01
0.1
1
10
frequency f (kHz)
Fig. 7-7 Frequency Characteristics of Cross Talk
18
2013-11-21