TH50VSF2582 Datasheet, PDF(15/50 Page) Toshiba Semiconductor – SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE

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TH50VSF2582 Datasheet, PDF (15/50 Pages) Toshiba Semiconductor – SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE

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TH50VSF2582/2583AASB

DC CHARACTERISTICS (Ta = -40Â°~85Â°C, VCCs/VCCf = 2.7 V~3.6 V)

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

IIL

Input Leakage Current

VIN = 0 V~VCC

ï£§ ï£§ Â±1 ÂµA

ISOH

SRAM Output High Current

VOH = VCCs â 0.5 V

â0.5 ï£§ ï£§ mA

ISOL

SRAM Output Low Current

VOL = 0.4 V

2.1 ï£§ ï£§ mA

IFOH1 Flash Output High Current (TTL) VOH = 2.4 V

â0.4 ï£§ ï£§ mA

IFOH2

Flash Output High Current

(CMOS)

VOH = VCCf Ã 0.85

VOH = VCCf â 0.4 V

â2.5 ï£§

â100 ï£§

ï£§ mA

ï£§ ÂµA

IFOL

Flash Output Low Current

VOL = 0.4 V

4 ï£§ ï£§ mA

ILO

ICCO1

ICCO2

Output Leakage Current

Flash Average Read Current

Flash Average Program/

Erase Current

VOUT = 0 V~VCC, OE = VIH

CEF = VIL, OE = VIH, IOUT = 0 mA,

tcycle = tRC(min)

CEF = VIL, OE = VIH, IOUT = 0 mA

ï£§ ï£§ Â±1 ÂµA

ï£§ ï£§ 30 mA

ï£§ ï£§ 15 mA

ICCO3

ICCO4

SRAM Average Operating

Current

CE1S = VIL, CE2S = VIH,

OE = VIH, IOUT = 0 mA

tcycle = tRC

ï£§ ï£§ 50

tcycle = 1 MHz ï£§ ï£§ 12

CE1S = 0.2 V, OE = VCCs â 0.2 V, tcycle = tRC

ï£§ ï£§ 45

CE2S = VCCs â 0.2 V, IOUT = 0 mA tcycle = 1 MHz

ï£§ï£§

ICCO5

Flash Average

Read-while-Programming

Current

VIN = VIH/VIL, IOUT = 0 mA, tcycle = tRC(min)

ï£§ ï£§ 45 mA

ICCO6

ICCO7

Flash Average

Read-while-Erasing Current

Flash Average Program-while-

Erase-Suspended Current

VIN = VIH/VIL, IOUT = 0 mA, tcycle = tRC(min)

VIN = VIH/VIL, IOUT = 0 mA

ï£§ ï£§ 45 mA

ï£§ ï£§ 15 mA

ICCS1

ICCS2

Flash Standby Current

(Automatic Sleep Mode(1))

CEF = RESET = VCCf or RESET = VSS

VIH = VCCf or VIL = VSS

ï£§ ï£§ 10 ÂµA

ICCS3

CE1S = VIH or CE2S = VIL

Ta = 25Â°C

ï£§ ï£§ 2 mA

ï£§ 0.01 0.5

Ta =

VCCs = 3.0 V â20Â°~40Â°C

ï£§ï£§ 1

ICCS4

SRAM Standby Current

VCoEr1SCE2=SV=CC0s.2âV0(.22)

VCCs

= 3 V Â± 10%

Ta =

â20Â°~85Â°C

Ta = 25Â°C

Ta =

â20Â°~85Â°C

ï£§ï£§ 5

ï£§ ï£§ 0.6 ÂµA

ï£§ï£§ 6

Ta = 25Â°C

VCCs

= 3.3 V Â± 0.3 V Ta =

â20Â°~85Â°C

ï£§ ï£§ 0.7

ï£§ï£§ 7

IACC

High-Voltage Input Current for

WP/ACC

8.5 V â¤ VACC â¤ 9.5 V

ï£§ ï£§ 20 mA

(1) If the address remains unchanged for 150 ns, the device will enter Automatic Sleep Mode.

(2) In Standby Mode, with CE1S â¥ VCCs â 0.2 V, these limits are guaranteed when CE2S â¥ VCCs â 0.2 V or CE2S â¤ 0.2 V, and

CIOS â¥ VCCs â 0.2 V or CIOS â¤ 0.2 V.

2001-10-25 15/50

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