TLN210 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS

TOSHIBA Infrared LED GaAℓAs Infrared Emitter
TLN210(F)
Lead Free Product
Infrared Light-emission Diode For Still Camera
Light Source For Auto Focus
• Optical radiation of current confining LED chip is condensed by a
resin lens.
• High output
• Effective emission diameter of 344µm
• Optical output efficiently radiated in solid angle of 0.984 sr
• Can be operated at VCC = 3V (which is equal to is two cells)
• Optical output vs. temperature characteristic almost constant
with constant forward voltage drive system
TLN210(F)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Pulse forward current
Reverse voltage
Operating temperature
Storage temperature
(Note 1)
I_F
(Note 2)
I_FP
V_R
T_opr
T_stg
50
mA
400
mA
1
V
−25~60
°C
−40~90
°C
(Note 1): Permissible value for acceptance inspection / characteristic
test and is guaranteed for actual application
(Note 2): Within 4 hours at 1 cycle with frequency 10 kHz, duty 50%,
power applied for 0.1s paused for 0.4s
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Forward voltage
Pulse forward voltage
Reverse current
Effective emission spot diameter
Radiation flux
(Note)
Half value angle
Peak emission wavelength
Spectral line half width
V_F
I_F = 50mA
V_FP
I_FP = 300mA, t = 10ms
I_R
V_R = 1V
―
―
φe
I_FP = 300mA, t = 10ms
θ¹
2
I_F = 50mA
λ_P
I_F = 50mA
∆λ
I_F = 50mA
(Note): Luminous radiation output to effective angle ±25 degree.
TOSHIBA
Weight: 0.18g (typ.)
Min Typ. Max Unit
― 1.35 ―
V
― 1.75 1.95
V
―
― 100 µA
―
348
―
µm
7
12
― mW
― 32.5 ―
°
―
875
―
nm
―
40
―
nm
1
2004-01-06