TC55V8512FTI-12 Datasheet, PDF (1/10 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55V8512JI/FTI-12,-15
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 8-BIT CMOS STATIC RAM
DESCRIPTION
The TC55V8512JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288
words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it
operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a low-power mode,
and output enable ( OE ) provides fast memory access. This device is well suited to cache memory applications
where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL
compatible. The TC55V8512JI/FTI is available in plastic 36-pin SOJ and 44-pin TSOP with 400mil width for high
density surface assembly. The TC55V8512JI/FTI guarantees −40° to 85°C operating temperature so it is suitable
for use in wide operating temperature system.
FEATURES
• Fast access time (the following are maximum values)
TC55V8512JI/FTI-12:12 ns
TC55V8512JI/FTI-15:15 ns
• Low-power dissipation
(the following are maximum values)
Cycle Time 12 15 20 25 ns
Operation (max) 180 150 140 120 mA
Standby:10 mA (both devices)
• Single power supply voltage of 3.3 V ± 0.3 V
• Fully static operation
• All inputs and outputs are LVTTL compatible
• Output buffer control using OE
• Package:
SOJ36-P-400-1.27 (JI)
(Weight: 1.35 g typ)
TSOP II44-P-400-0.80 (FTI) (Weight: 0.45 g typ)
PIN ASSIGNMENT (TOP VIEW)
36 PIN SOJ
44 PIN TSOP
A17 1
A3 2
A2 3
A1 4
A0 5
CE ⁶
I/O1 7
I/O2 8
VDD 9
GND 10
I/O3 11
I/O4 12
WE ¹³
A16 14
A15 15
A14 16
A13 17
A18 18
NC 1
NC 2
A17 3
A3 4
36 NC
A2 5
35 A4
A1 6
34 A5
A0 7
33 A6
CE ⁸
32 A7
I/O1 9
31 _OE
I/O2 10
30 I/O8
VDD 11
29 I/O7 GND 12
28 GND I/O3 13
27 VDD
I/O4 14
26 I/O6 _WE 15
25 I/O5 A16 16
24 A8
A15 17
23 A9
A14 18
22 A10 A13 19
21 A11 A18 20
20 A12
NC 21
19 NU
NC 22
44 NC
43 NC
42 NC
41 A4
40 A5
39 A6
38 A7
37 _OE
36 I/O8
35 I/O7
34 GND
33 VDD
32 I/O6
31 I/O5
30 A8
29 A9
28 A10
27 A11
26 A12
25 NU
24 NC
23 NC
(TC55V8512JI)
(TC55V8512FTI)
PIN NAMES
A0 to A18 Address Inputs
I/O1 to I/O8 Data Inputs/Outputs
CE
Chip Enable Input
WE
Write Enable Input
OE
Output Enable Input
V_DD
GND
Power (+3.3 V)
Ground
NC
No Connection
NU
Not Usable (Input)
2001-12-19 1/10