SSM6K32TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Relay drive, DC/DC converter application

SSM6K32TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K32TU
○ Relay drive, DC/DC converter application
Unit: mm
z 4Vdrive
z Low on resistance:
R_on = 440mΩ (max) (@V_GS = 4 V)
R_on = 300mΩ (max) (@V_GS = 10 V)
Absolute Maximum Ratings (Ta = 25℃)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
60
V
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
I_D
Pulse
I_DP
2
A
6
Drain power dissipation
P_D (Note 1)
500
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25℃)
1,2,5,6 : Drain
3
: Gate
4
: Source
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Characteristics
Gate leakage current
Drain cut-off current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate−source charge
Gate−drain charge
Drain-Source forward voltage
Symbol
I_GSS
I_DSS
V _{(BR) DSS}
V_th
R_{DS (ON)}
|Y_fs|
C_iss
C_rss
C_oss
t_r
t_on
t_f
t_off
Q_g
Q_gs
Q_gd
V_DSF
Test Condition
V_GS = ±16V, V_DS = 0V
V_DS = 60V, V_GS = 0V
I_D = 10mA, V_GS = 0V
V_DS = 10V, l_D = 1mA
V_GS = 4V, I_D = 1A
V_GS = 10V, I_D = 1A
V_DS = 10V, I_D = 1A
V_DS = 10V, V_GS = 0V
f = 1MHz
V_DD ≒ 30 V, I_D = 1 A
V_GS = 0~10 V, R_G = 50 Ω
V_DD≒48V, V_GS = 10V
I_D = 2A
I_D = -2A, V_GS = 0V
1
Min Typ. Max Unit
―
―
±10 μA
―
―
100 μA
60
―
―
V
0.8
―
2.0
V
― 0.33 0.44
Ω
― 0.23 0.30
1.0
2.0
―
S
―
140
―
―
20
―
pF
―
65
―
―
140
―
―
210
―
ns
―
470
―
― 1600 ―
―
5.0
―
―
3.6
―
nC
―
1.4
―
―
― −1.5 V
2007-11-01