HN2D03F_14 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D03F
High-Speed Switching Application
z Small package
z Low forward voltage
z Small total capacitance
: V_{F (2)} = 0.94 V (typ.)
: C_T = 2.5 pF (typ.)
HN2D03F
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
420
V
Reverse voltage
V_R
400
V
Maximum (peak) forward current
I_FM
300*
mA
Average forward current
I_O
100*
mA
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
I_FSM
P
T_j
T_stg
2*
A
300**
mW
150
°C
−55 to 150
°C
1.CATHODE(C1)
2.CATHODE(C2)
3.CATHODE(C3)
4.ANODE (A3)
5.ANODE (A2)
6.ANODE (A1)
Note: Using continuously under heavy loads (e.g. the application of high ^JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-3K1C
reliability significantly even if the operating conditions (i.e. operating _{Weight: 15 mg (typ.)}
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Absolute Maximum Ratings per each one of Q1, Q2 or Q3. In case of simultaneous use, the Absolute Maximum
Ratings per diode shall be derated to 75%.
**: Total rating
Electrical Characteristics (Q1, Q2, Q3, Common, Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
Min Typ. Max Unit
― I_F = 10 mA
― I_F = 100 mA
―
0.8
―
V
― 0.94 1.3
― V_R = 300 V
― V_R = 400 V
―
― 0.05
μA
―
―
0.1
― V_R = 0 V, f = 1 MHz
―
2.5
―
pF
― IF = 10 mA
(fig.1) ―
0.5
―
μs
Start of commercial production
2002-04
1
2014-03-01