|
HN2D03F Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High Speed Switching Application | |||
|
TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D03F
High Speed Switching Application
z Small package
z Low forward voltage
z Small total capacitance
: VF (2) = 0.94V (typ.)
: CT = 2.5pF (typ.)
HN2D03F
Unit in mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
420
V
Reverse voltage
VR
400
V
Maximum (peak) forward current
IFM
300*
mA
Average forward current
IO
100*
mA
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
IFSM
P
Tj
Tstg
2*
A
300**
mW
150
°C
â55~150
°C
1.CATHODE(C1)
2.CATHODE(C2)
3.CATHODE(C3)
4.ANODE (A3)
5.ANODE (A2)
6.ANODE (A1)
Note: Using continuously under heavy loads (e.g. the application of high JEDEC
â
temperature/current/voltage and the significant change in
JEITA
â
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-3K1C
reliability significantly even if the operating conditions (i.e. operating Weight: 0.015mg(typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Absolute Maximum Ratings per each one of Q1,Q2 or Q3. In case of simultaneous use, the Absolute Maximum
Ratings per diode shall be derated to 75%.
**: Total rating
Electrical Characteristics (Q1, Q2, Q3, Common, Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
â IF = 10mA
â IF = 100mA
â VR = 300V
â VR = 400V
â VR = 0, f = 1MHz
â IF = 10mA (fig.1)
Min Typ. Max Unit
â
0.8
â
V
â
1.0
1.3
â
â
0.1
μA
â
â
1.0
â
2.5
â
pF
â
0.5
â
us
1
2007-11-22
|
▷ |