CMG02 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – General Purpose Rectifier Applications

TOSHIBA Rectifier Silicon Diffused Type
CMG02
General Purpose Rectifier Applications
• Average forward current: I_{F (AV)} = 2.0 A
• Repetitive peak reverse voltage: V_RRM = 400 V
• Suitable for compact assembly due to small surface-mount package
“M−FLAT^TM” (Toshiba package name)
CMG02
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak surge current
Junction temperature
Storage temperature
V_RRM
400
V
I_{F (AV)}
2.0
A
I_FSM
80 (50 Hz)
A
T_j
−40 to 150
°C
T_stg
−40 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
TOSHIBA
3-4E1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.023 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Peak repetitive reverse current
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to lead)
Symbol
V_{FM（1）}
V_{FM（2）}
I_RRM
R_{th (j-a)}
R_{th (j-ℓ)}
Test Condition
Min
I_FM =1.0 A
―
I_FM = 2.0 A
―
V_RRM = 400 V
―
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
―
(board thickness: 0.64 t)
Device mounted on a glass-epoxy
board
(board size: 50 mm × 50 mm)
―
(soldering land: 6 mm × 6 mm)
(board thickness: 1.6 t)
Device mounted on a glass-epoxy
board
(board size: 50 mm × 50 mm)
―
(soldering land: 2.1 mm × 1.4 mm)
(board thickness: 1.6 t)
―
―
Typ.
0.86
0.9
―
―
―
―
―
Max Unit
―
V
1.1
V
10
μA
60
110 _°C/W
180
16 °C/W
1
2006-11-06