CMF05 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High-Speed Rectifier Applications (Fast Recovery)

TOSHIBA Fast Recovery Diode Silicon Diffused Type
CMF05
CMF05
High-Speed Rectifier Applications (Fast Recovery)
Switching Mode Power Supply Applications
DC-DC Converter Applications
• Repetitive peak reverse voltage: V_RRM = 1000 V
• Average forward current: I_{F (AV)} = 0.5 A
• Forward voltage: V_FM = 2.7 V (max)
• Very fast reverse-recovery time: t_rr = 100 ns (max)
• Suitable for compact assembly due to the use of a small
surface-mount package“ M−FLAT^TM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Repetitive peak reverse voltage
Average forward current
Peak one-cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
V_RRM
I_{F (AV)}
I_FSM
T_j
T_stg
Note 1: Tℓ = 92°C
Rectangular waveform (α = 180°)
Rating
Unit
1000
V
0.5 (Note 1) A
10 (50 Hz)
(Note 2)
A
−40 to 125
°C
−40 to 150
°C
Unit: mm
②
①
0.16
1.75 ± 0.1
+ 0.2
2.4 − 0.1
① ANODE
② CATHODE
JEDEC
⎯
JEITA
⎯
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-02-17