CMF02TE12L.Q Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Switching Mode Power Supply Applications DC/DC Converter Applications

TOSHIBA Fast Recovery Diode Silicon Diffused Type
CMF02
CMF02
Switching Mode Power Supply Applications
DC/DC Converter Applications
• Repetitive peak reverse voltage: V_RRM = 600 V
• Average forward current: I_{F (AV)} = 1.0 A
②
• Forward voltage: V_FM = 2.0 V (max)
• Very fast reverse-recovery time: t_rr = 100 ns (max)
• Suitable for high-density board assembly due to the use of a small
surface-mount package, M−FLAT^TM
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
①
0.16
Characteristic
Repetitive peak reverse voltage
Symbol
V_RRM
Rating
Unit
600
V
1.75 ± 0.1
+ 0.2
2.4 − 0.1
Average forward current
I_F(AV)
1.0 (Note 1)
A
Peak one-cycle surge forward current
(non-repetitive)
I_FSM
10 (50 Hz)
A
① ANODE
② CATHODE
Junction temperature
T_j
−40 to 150
°C
Storage temperature range
T_stg
−40 to 150
°C
JEDEC
⎯
Note 1: Tℓ = 108°C
Rectangular waveform (α = 180°)
JEITA
⎯
Note 2: Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-4E1A
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.023 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2008-05-13