XP202A0003PR_12 Datasheet, PDF (4/5 Pages) Torex Semiconductor – P-channel 4V (G-S) MOSFET

XP202A0003PR-G
(7) Switching Time vs. Drain Current
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100
XP202A0003PR
V_GS= -10V, V_DS= -15V
td(of f )
tf
10
tr
td(on)
(8) Ciss, Coss, Crss vs. Drain-Source Voltage
1000
XP202A0003PR
Ciss
f=1MHz
Coss
100
Crss
1
0.1
1
10
Drain Current_： I_D (A)
(9) Gate-Source Voltage vs. Gate Charge
XP202A0003PR
-10
V_DS= -15V， I_D= -5A
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 1 2 3 4 5 6 7 8 9 10
Gate Charge_： Qg (nc)
10
0
5 10 15 20 25 30
Drain - Source Voltage_： V_DS (V)
(10) Area of Safe Operation
100
10
I_D=-20A
I_D=-5A
XP202A0003PR
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1
0.1
0.01
0.01
Ta=25^oC
Single pulse
When mounted on ceramic substrate
(250mm² X 0.8mm)
0.1
1
10
0.1ms
1ms
10ms
100ms
1000ms
DC Operation
100
Drain-Source Voltage : V_DS (V)
4/5