XP202A0003PR_12 Datasheet, PDF (3/5 Pages) Torex Semiconductor – P-channel 4V (G-S) MOSFET

XP202A0003PR-G
˙TYPICAL PERFORMANCE CHARACTERISTICS
(1) Drain Current vs. Drain-Source Voltage
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.0
XP202A0003PR
Ta= 25℃
-16.0V
-10.0V
-6.0V
-4.5V
-4.0V
-3.5V
-3.0V
V_GS= -2.5V
-0.2 -0.4 -0.6 -0.8 -1.0
Drain-Source Voltage_： V_DS (V)
(2) Drain Current vs. Drain-Source Voltage
-6.0
-5.5
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.0
XP202A0003PR
VDS= -10V， Pulse Test
Ta= 75_℃
Ta= 25_℃
-1.0
-2.0
Ta= -25_℃
-3.0
-4.0
Gate-Source Voltage_： V_GS (V)
(3) Drain-Source On-State Resistance vs.
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XP202A0003PR
200
Ta= 25℃
180
160
140
120
100
I_D= -3.0A
80
60
40
20
0
0
I_D= -1.5A
-2 -4 -6
-8 -10 -12 -14 -16
Gate-to-Source Voltage_： V_GS (V)
(4) Drain-Source On-State Resistance vs.
Ambient Temperature
XP202A0003PR
140
120
V_GS= -4.0V, I_D= -1.5A
100
V_GS= -4.5V, I_D= -1.5A
80
60
40
20
V_GS= -10V, I_D= -3A
0
-50 -25 0 25 50 75 100 125 150
Ambient Temperature_： Ta (_℃)
(5) Forward Transfer Admittance vs. Drain Current
XP202A0003PR
100
V_DS= -10V
Ta= -25_℃
10
Ta=25_℃
(6) Source Current vs. Diode Forward Voltage
XP202A0003PR
10
V_GS= 0V
Ta= 75_℃
1
Ta= 25_℃
1
Ta=75_℃
0.1
0.01
0.1
1
10
Drain Current_： I_D (A)
0.1
0.01
-0.2
Ta= -25_℃
-0.4 -0.6 -0.8 -1.0 -1.2
Diode Forw ard Voltage_： V_SD (V)
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