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| XP162A11C0PR Datasheet, PDF (4/4 Pages) Torex Semiconductor – Power MOS FET | |||
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Ë Electrical Characteristics
Drain/Source Voltage vs. Capacitance
7HT 7
G .)[
5B Ë
Switching Time vs. Drain Current
7HT 7
7EE˺7
18 ÐT
EVUZʽ
5B Ë
$JTT
$PTT
$STT
UG
US
UE PGG
UE PO
%SBJO4PVSDF7PMUBHF7ET 7
%SBJO$VSSFOU*E "
Gate/Source Voltage vs. Gate Charge
7ET 7
*E "
5B Ë
Reverse Drain Current vs. Source/Drain Voltage
5B Ë
1VMTF5FTU
7
7HT 7
7
(BUF$IBSHF2H OD
4PVSDF%SBJO7PMUBHF7TE 7
Standardized Transition Thermal Resistance vs. Pulse Width
3UI DIB
Ë8
*NQMFNFOUFEPOBDFSBNJD1$#
4JOHMF1VMTF
1VMTF8JEUI18 T
u
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