XP161A02A1PR Datasheet, PDF (4/4 Pages) Torex Semiconductor – N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

91""13
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE

Vgs=0V, f=1MHz


$JTT
$PTT
$STT






Capacitance:Ciss, Coss, Crss (pF)
SWITCHING TIME vs. DRAIN CURRENT

Vgs=5V, Vdd˺10V, PW=10µsec. duty≤1%
UG

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Drain Current Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
Vds=10V, Id=3A





REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test


7HTʹ7
7

 7








Gate Charge:Qg (nc)







Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a)=62.5˚C/W, (Implemented on a ceramic PCB)
11
Single Pulse








Pulse Width:PW (sec)


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