XP161A02A1PR Datasheet, PDF (3/4 Pages) Torex Semiconductor – N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

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DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE

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Pulse Test, Ta=25:
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Drain-Source Voltage:Vds (V)
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE

Pulse Test, Vds=10V

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Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
Pulse Test, Ta=25:

DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse Test, Ta=25:



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Gate-Source Voltage:Vgs (V)
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DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
Pulse Test






Drain Current:Id (A)
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
Vds=10V, Id=1mA


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Ambient Temp.:Topr (:)




 

    
Ambient Temp. Topr (:)
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