XP152A01D8MR Datasheet, PDF (4/4 Pages) Torex Semiconductor – Power MOS FET

˙ XP152A01D8MR Characteristics
Drain/Source Voltage vs. Capacitance

Vgs=0V, f=1MHz
$JTT
$PTT

$STT
Switching Time vs. Drain Current

Vgs=-5V, Vdd˺-10V, PW=10µsec. dutyʽ1%
UG

UEÊ¢PGGÊ£
US

UEÊ¢POÊ£






Drain/Source Voltage:Vds (V)
Gate/Source Voltage vs. Gate Charge
Vds=-10V, Id=-0.5A
-10
-8
-6
-4
-2
0
0
2
4
6
8
Gate Charge:Qg (nc)




Drain Current:Id (A)
Reverse Drain Current vs. Source/Drain Voltage
-1.5
Pulse Test, Ta=25:
u
Vgs=-4.5V
-1
-2.5V
-0.5
0, 4.5V
0
0
-0.2 -0.4 -0.6 -0.8
-1
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Rth (ch-a)=250˚C/W, (Implemented on a glass epoxy PCB)
10
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
Pulse Width:PW (sec)
10
100