XP152A01D8MR Datasheet, PDF (2/4 Pages) Torex Semiconductor – Power MOS FET

s Electrical Characteristics
DC characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state
Resistance (note)
Forward Transfer Admittance
(note)
Body Drain Diode
Forward Voltage
Note: Effective during pulse test.
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
Yfs
Vf
CONDITIONS
Vds=-20V, Vgs=0V
Vgs=±12V, Vds=0V
Id=-1mA, Vds=-10V
Id=-0.3A, Vgs=-4.5V
Id=-0.3A, Vgs=-2.5V
Id=-0.3A, Vds=-10V
If=-0.5A, Vgs=0V
Ta=25:
MIN
TYP
MAX
UNITS
-10
µA
±10
µA
-0.5
V
0.36
0.48
Ω
0.6
0.8
Ω
1
S
-0.8
-1.1
V
Dynamic characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=-10V, Vgs=0V
f=1MHz
Ta=25:
MIN
TYP
MAX
UNITS
180
pF
100
pF
35
pF
u
Switching characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs=-5V, Id=-0.3A
Vdd=-10V
Ta=25:
MIN
TYP
MAX
UNITS
10
ns
15
ns
30
ns
70
ns
Thermal characteristics
PARAMETER
Thermal Resistance
(channel-surroundings)
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Rth (ch-a)
Implement on a glass epoxy
resin PCB
250
:/W