XP151A03A7MR Datasheet, PDF (4/4 Pages) Torex Semiconductor – Power MOS FET

˙ XP151A03A7MR Characteristics
Drain/Source Voltage vs. Capacitance

Vgs=0V, f=1MHz




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Drain/Source Voltage:Vds (V)
Switching Time vs. Drain Current

Vgs=5V, Vdd˺10V, PW=10µsec. dutyʽ1%
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Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
Vds=10V, Id=0.8A











Gate Charge:Qg (nc)
Reverse Drain Current vs. Source/Drain Voltage
Pulse Test

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Source/Drain Voltage:Vsd (V)







Standardized Transition Thermal Resistance vs. Pulse Width
Rth (ch-a)=250˚C/W, (Implemented on a glass epoxy PCB)
Single Pulse




Pulse Width:PW (sec)