XP151A03A7MR Datasheet, PDF (2/4 Pages) Torex Semiconductor – Power MOS FET

s Electrical Characteristics
DC characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
SYMBOL
Idss
Igss
Vgs(off)
Drain-Source On-state
Resistance (note)
Rds(on)
Forward Transfer Admittance
(note)
Yfs
Body Drain Diode
Forward Voltage
Vf
Note: Effective during pulse test.
CONDITIONS
Vds=20V, Vgs=0V
Vgs=±8V, Vds=0V
Id=1mA, Vds=10V
Id=0.4A, Vgs=4.5V
Id=0.4A, Vgs=2.5V
Id=0.4A, Vgs=1.5V
Id=0.4A, Vds=10V
If=0.8A, Vgs=0V
Ta=25:
MIN
TYP
MAX
UNITS
10
µA
±10
µA
0.5
V
0.13
0.17
Ω
0.18
0.24
Ω
0.3
0.5
Ω
3.5
S
0.8
1.1
V
Dynamic characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=10V, Vgs=0V
f=1MHz
Ta=25:
MIN
TYP
MAX
UNITS
220
pF
100
pF
30
pF
u
Switching characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs=5V, Id=0.4A
Vdd=10V
Ta=25:
MIN
TYP
MAX
UNITS
10
ns
15
ns
45
ns
60
ns
Thermal characteristics
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Thermal Resistance
(channel-surroundings)
Rth (ch-a)
Implement on a glass epoxy
resin PCB
250
:/W