XP151A02B0MR Datasheet, PDF (4/4 Pages) Torex Semiconductor – Power MOS FET

˙ XP151A02B0MR Characteristics
Drain/Source Voltage vs. Capacitanceɹ

7HTʹ7

Gʹ.)[
Switching Time vs. Drain Currentɹɹɹ

Vgs=5V, Vdd˺10V, PW=10µsec. dutyʽ1%
$JTT

$PTT
$STT




ɹɹɹDrain/Source Voltage:Vds (V)
UG

UEÊ¢PGGÊ£
UEÊ¢POÊ£

US




ɹɹɹɹɹɹDrain Current:Id (A)
Gate/Source Voltage vs. Gate Chargeɹɹ
Vds=10V, Id=0.8A











ɹɹɹɹGate Charge:Qg (nc)
Reverse Drain Current vs. Source/Drain Voltage
Pulse Test


7HTʹ7

7


 7
u







Source/Drain Voltage:Vsd (V)ɹɹɹɹ







Standardized Transition Thermal Resistance vs. Pulse Width
Rth (ch-a)=250˚C/W, (Implemented on a glass epoxy PCB)
Single Pulse




Pulse Width:PW (sec)