XP151A02B0MR Datasheet, PDF (1/4 Pages) Torex Semiconductor – Power MOS FET

91"#.3
1PXFS
.04
'&5
x N-Channel Power MOS FET
x DMOS Structure
x Low On-State Resistance: 0.2Ω MAX
x Ultra High-Speed Switching
x SOT-23 Package
s Applications
q Notebook PCs
q Cellular and portable phones
q On-board power supplies
q Li-ion battery systems
s General Description
The XP151A02B0MR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-23 package makes high density mounting possible.
s Features
Low on-state resistance: Rds(on)=0.2Ω(Vgs=4.5V)
Rds(on)=0.32Ω(Vgs=2.5V)
Ultra high-speed switching
Operational Voltage: 2.5V
High density mounting: SOT-23
u
s Pin Configuration
D
3
1
2
G
S
SOT-23
(TOP VIEW)
s Equivalent Circuit
3

1
2
N-Channel MOS FET
(1 device built-in)
s Pin Assignment
PIN
NUMBER
PIN
NAME
1
G
2
S
3
D
FUNCTION
Gate
Source
Drain
s Absolute Maximum Ratings
Ta=25:
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
20
V
±12
V
0.8
A
2.5
A
0.8
A
Continuous Channel
Power Dissipation (note)
Pd
0.5
W
Channel Temperature
Tch
150
:
Storage Temperature
Tstg
-55~150 :
Note: When implemented on a glass epoxy PCB