XP151A01C3MR Datasheet, PDF (4/4 Pages) Torex Semiconductor – N-Channel Power MOS FET

˙ XP151A01C3MR Characteristics
Drain/Source Voltage vs. Capacitance

Vgs=0V, f=1MHz



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Drain/Source Voltage:Vds (V)
Switching Time vs. Drain Current

Vgs=5V, Vdd˺10V, PW=10µsec. dutyʽ1%
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Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
Vds=10V, Id=0.8A

Reverse Drain Current vs. Source/Drain Voltage
Pulse Test



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Gate Charge:Qg (nc)







Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Rth (ch-a)=250˚C/W, (Implemented on a glass epoxy PCB)


Single Pulse









Pulse Width:PW (sec)